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GaN-MOCVD

Japan Pionics accomplished GaN-MOCVD systems with high materials efficiency.
GaN-MOCVD series, RKY-2000 and RKY-3000, contribute to the mass production of UV, blue and white LEDs.

Specifications

  1. Heater: Uses a resistance heating type carbon heater
    The structure isolates the heater from the reaction gas, extending the heater lifetime.
  2. Susceptor: Uses both a face-down type and a planetary type with independent rotation and revolution speed ratio for high-quality film formation.
  3. Susceptor high-temperature automatic transfer system: Achieves high productivity by using a robot that can change the susceptor in a high temperature environment after film formation.
  4. Growth pressure: The growth pressure can be set to any value between 1/8 atm. to 1 atm.
  5. High material efficiency: Achieves a material efficiency of more than 20% under atmospheric pressure, contributing to lower running costs.

GaN-MOCVD equipment lineup and substrate processing capacities

Model RKY-2000 RKY-3000
Number of processed substrates
2inch 10 15
3inch 8 12
4inch 7 11
6inch - 6

Equipment expansion options

  Standard model Expansion option
I II III IV
Reactors 1 2 3 1 2
Robots 1 1 1 1 1
Load lock 1 1 1 1 1
Cleaning furnaces 0 0 0 1 1
GaN-MOCVD

High-temperature transport system

High-temperature transport system

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JPC GaN Process Total Solution

JPC GaN Process Total Solution

For many years Japan Pionics has supplied the high-level gas purifiers and detoxification equipment that are needed for semiconductor manufacture. Based on this experience, we propose systems composed of high-level gas purifiers, detoxification equipment, and other systems with a range of capacities to match the MOCVD equipment.

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Inquiries for GaN-MOCVD

Telephone: 81-463-53-8741 (Service hours: 10:00 - 17:00)
Facsimile: 81-463-53-8746 (24 hours)
Click here for Request For Information Contact Form